Infineon BSC Type N-Channel MOSFET, 381 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSC066N06NSATMA1
- RS-stocknr.:
- 241-9675
- Fabrikantnummer:
- BSC066N06NSATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,23
(excl. BTW)
€ 8,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 6.695 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,446 | € 7,23 |
| 50 - 120 | € 1,246 | € 6,23 |
| 125 - 245 | € 1,172 | € 5,86 |
| 250 - 495 | € 1,086 | € 5,43 |
| 500 + | € 1,014 | € 5,07 |
*prijsindicatie
- RS-stocknr.:
- 241-9675
- Fabrikantnummer:
- BSC066N06NSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel MOSFET has 60 V drain source voltage (VDS) & 64 A drain current (ID). It is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition, these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for high performance SMPS ,e.g. sync. rec.
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHScompliant
Halogen-free according to IEC61249-2-21
Gerelateerde Links
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC066N06NSATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ040N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- Infineon N-Channel MOSFET Transistor 20 V, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 BSC097N06NSTATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 BSC065N06LS5ATMA1
- Infineon Dual N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 60 V, 8-Pin SuperSO8 5 x 6 BSC028N06NSTATMA1