Nexperia Type P-Channel MOSFET, 22.2 A, 30 V Enhancement, 8-Pin MLPAK33 PXP6R1-30QLJ
- RS-stocknr.:
- 243-4890
- Fabrikantnummer:
- PXP6R1-30QLJ
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,62
(excl. BTW)
€ 11,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 3.000 stuk(s) vanaf 17 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,962 | € 9,62 |
| 50 - 90 | € 0,943 | € 9,43 |
| 100 - 240 | € 0,749 | € 7,49 |
| 250 - 990 | € 0,733 | € 7,33 |
| 1000 + | € 0,541 | € 5,41 |
*prijsindicatie
- RS-stocknr.:
- 243-4890
- Fabrikantnummer:
- PXP6R1-30QLJ
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 22.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 22.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field effect transistor (FET) in a MLPAK33 (SOT8002) surface mounted device (SMD) plastic package having trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
Gerelateerde Links
- Nexperia Type P-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33
- Nexperia Type P-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXP9R1-30QLJ
- Nexperia Type P-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXP013-30QLJ
- Nexperia Type P-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33
- Nexperia Type P-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXN017-30QLJ
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXN6R7-30QLJ
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33 PXN9R0-30QLJ
