Infineon HEXFET 2 Type P-Channel MOSFET, -3.4 A, -55 V, 8-Pin SOIC AUIRF7342QTR
- RS-stocknr.:
- 243-9285
- Fabrikantnummer:
- AUIRF7342QTR
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,43
(excl. BTW)
€ 6,57
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,715 | € 5,43 |
| 20 - 48 | € 2,25 | € 4,50 |
| 50 - 98 | € 2,115 | € 4,23 |
| 100 - 198 | € 1,95 | € 3,90 |
| 200 + | € 1,82 | € 3,64 |
*prijsindicatie
- RS-stocknr.:
- 243-9285
- Fabrikantnummer:
- AUIRF7342QTR
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -3.4A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -55V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -3.4A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type SOIC | ||
Series HEXFET | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -55V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon AUIRF7342QTR N-Channel Power MOSFET specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant