DiodesZetex DMN Type N-Channel MOSFET, 11 A, 12 V Enhancement, 3-Pin SC-59 DMN1019USNQ-7
- RS-stocknr.:
- 244-1912
- Fabrikantnummer:
- DMN1019USNQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,325
(excl. BTW)
€ 11,275
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 1.675 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,373 | € 9,33 |
| 50 - 75 | € 0,365 | € 9,13 |
| 100 - 225 | € 0,27 | € 6,75 |
| 250 - 975 | € 0,263 | € 6,58 |
| 1000 + | € 0,256 | € 6,40 |
*prijsindicatie
- RS-stocknr.:
- 244-1912
- Fabrikantnummer:
- DMN1019USNQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SC-59 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SC-59 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switch, dc to dc Converters, power management functions.
Low on resistance
ESD Protected gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
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