DiodesZetex DMN Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 10-Pin 4-DSN3015-10 DMN12M8UCA10-7
- RS-stocknr.:
- 244-1915
- Fabrikantnummer:
- DMN12M8UCA10-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 13,175
(excl. BTW)
€ 15,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.925 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,527 | € 13,18 |
| 50 - 475 | € 0,518 | € 12,95 |
| 500 - 975 | € 0,371 | € 9,28 |
| 1000 + | € 0,363 | € 9,08 |
*prijsindicatie
- RS-stocknr.:
- 244-1915
- Fabrikantnummer:
- DMN12M8UCA10-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | 4-DSN3015-10 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.16mm | |
| Width | 1.54 mm | |
| Length | 3.03mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type 4-DSN3015-10 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 0.16mm | ||
Width 1.54 mm | ||
Length 3.03mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ESD protection of gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
Gerelateerde Links
- Diodes Inc N-Channel MOSFET 4-DSN3015-10 DMN12M8UCA10-7
- Diodes Inc N-Channel MOSFET X4-DSN1717-4 DMN2009UCA4-7
- Diodes Inc N-Channel MOSFET X4-DSN1111-4 DMN2030UCA4-7
- Diodes Inc N-Channel MOSFET 45 V TSOT26 DMN4060SVTQ-7
- Diodes Inc N-Channel MOSFET 30 V TSOT26 DMN3061SVTQ-7
- Diodes Inc DMN3042LFDF N-Channel MOSFET 30 V, 6-Pin U-DFN2020 DMN3042LFDF-7
- Diodes Inc N-Channel MOSFET 20 V, 6-Pin TSOT-26 DMN2024UVTQ-7
- Diodes Inc N-Channel MOSFET 30 V, 6-Pin U-DFN2020 DMN3016LFDFQ-7
