onsemi NTT Type N-Channel MOSFET, 58 A, 1200 V N, 8-Pin WDFN NTTFS012N10MDTAG
- RS-stocknr.:
- 244-9189
- Fabrikantnummer:
- NTTFS012N10MDTAG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,77
(excl. BTW)
€ 11,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 1.310 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,954 | € 9,77 |
| 50 - 95 | € 1,684 | € 8,42 |
| 100 - 495 | € 1,46 | € 7,30 |
| 500 - 995 | € 1,284 | € 6,42 |
| 1000 + | € 1,168 | € 5,84 |
*prijsindicatie
- RS-stocknr.:
- 244-9189
- Fabrikantnummer:
- NTTFS012N10MDTAG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | WDFN | |
| Series | NTT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type WDFN | ||
Series NTT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET used as Primary switch in isolated DC−DC converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap and O-ring Switch, BLDC Motor and Solar Inverter.
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant
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