DiodesZetex 2 Type N-Channel MOSFET, 100 V Enhancement, 6-Pin UDFN-2020 DMN10H6D2LFDB-7

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Verpakkingsopties
RS-stocknr.:
246-7507
Fabrikantnummer:
DMN10H6D2LFDB-7
Fabrikant:
DiodesZetex
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Merk

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

100V

Package Type

UDFN-2020

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1.2nC

Maximum Power Dissipation Pd

0.7W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2020-6 packaging. It offers fast switching and high efficiency. It offers an ESD protected gate (up to 1kV).

Maximum drain to source voltage is 100 V Maximum gate to source voltage is ±20 V It offers a low gate threshold voltage It provides a low input capacitance

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