Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R022M1HXTMA1

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  • Verzending vanaf 07 juli 2026
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Verpakkingsopties
RS-stocknr.:
248-9311
Fabrikantnummer:
IMBG65R022M1HXTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

IMBG

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.

Optimized switching behaviour at higher currents

Commutation robust fast body diode with low Qf

Superior gate oxide reliability

Tj,max-175°C and excellent thermal behaviour

Lower RDS(on) and pulse current dependency on temperature

Increased avalanche capability

Compatible with standard drivers

Kelvin source provides upto 4 times lower switching losses

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