Infineon HEXFET Type P-Channel MOSFET, 230 A, 75 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 128,80

(excl. BTW)

€ 155,85

(incl. BTW)

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Per tube*
50 - 50€ 2,576€ 128,80
100 - 200€ 2,318€ 115,90
250 +€ 2,189€ 109,45

*prijsindicatie

RS-stocknr.:
249-6869
Fabrikantnummer:
AUIRF6215
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

230A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

Advance planner technology

LowOn-Resistance

Dynamic dV/dT Rating

175 C operating temperature

Fast switching

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