Infineon AUIRFS Type N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220 AUIRFB8409
- RS-stocknr.:
- 249-6872
- Fabrikantnummer:
- AUIRFB8409
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 10,00
(excl. BTW)
€ 12,10
(incl. BTW)
Voeg 8 eenheden toe voor gratis bezorging
Laatste voorraad RS
- Laatste 995 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 10,00 |
*prijsindicatie
- RS-stocknr.:
- 249-6872
- Fabrikantnummer:
- AUIRFB8409
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | AUIRFS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series AUIRFS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
Gerelateerde Links
- Infineon AUIRFS Type N-Channel MOSFET 40 V, 3-Pin TO-220
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-220
- Infineon Type N-Channel MOSFET 60 V TO-220
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-220 AUIRF1404Z
- Infineon AUIRFS Type N-Channel MOSFET 75 V, 3-Pin TO-220 AUIRF3205
- Infineon Type N-Channel MOSFET 60 V TO-220 IRFB7534PBF
- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRFB7430PBF