Infineon BSZ Type N, Type P-Channel MOSFET, 5.10 A, +20 V P, 8-Pin PQFN BSZ15DC02KDHXTMA1
- RS-stocknr.:
- 250-0564
- Fabrikantnummer:
- BSZ15DC02KDHXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, in een pakket van 5)*
€ 8,40
(excl. BTW)
€ 10,15
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending 340 stuk(s) vanaf 11 februari 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,68 | € 8,40 |
| 50 - 120 | € 1,394 | € 6,97 |
| 125 - 245 | € 1,312 | € 6,56 |
| 250 - 495 | € 1,226 | € 6,13 |
| 500 + | € 1,126 | € 5,63 |
*prijsindicatie
- RS-stocknr.:
- 250-0564
- Fabrikantnummer:
- BSZ15DC02KDHXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 5.10A | |
| Maximum Drain Source Voltage Vds | +20V | |
| Series | BSZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 5.10A | ||
Maximum Drain Source Voltage Vds +20V | ||
Series BSZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon makes this Complementary P + N channel, Enhancement mode. It is avalanche rated and halogen-free. This device is OptiMOS 2 + OptiMOS P 2 Small Signal Transistor with Super Logic level (2.5V rated). It has common drain and it is Avalanche rated. The operating temperature is 175°C. It is 100% lead-free, Halogen-free.
Super Logic level (2.5V rated)
100% lead-free
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