Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1
- RS-stocknr.:
- 241-9699
- Fabrikantnummer:
- BSZ018NE2LSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,97
(excl. BTW)
€ 3,594
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 5.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 1,485 | € 2,97 |
| 10 - 18 | € 1,40 | € 2,80 |
| 20 - 48 | € 1,275 | € 2,55 |
| 50 - 98 | € 1,135 | € 2,27 |
| 100 + | € 1,08 | € 2,16 |
*prijsindicatie
- RS-stocknr.:
- 241-9699
- Fabrikantnummer:
- BSZ018NE2LSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET is a N channel MOSFET which is Optimized for high performance Buck converter. It is 100% avalanche tested.
Monolithic integrated Schottky like diode
Halogen-free according to IEC61249-2-21
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