DiodesZetex Type P-Channel MOSFET, 30 V X2-DFN0806-6 DMP32D9UDAQ-7B
- RS-stocknr.:
- 254-8638
- Fabrikantnummer:
- DMP32D9UDAQ-7B
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 4,55
(excl. BTW)
€ 5,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 10.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 475 | € 0,182 | € 4,55 |
| 500 - 975 | € 0,135 | € 3,38 |
| 1000 - 2475 | € 0,132 | € 3,30 |
| 2500 - 4975 | € 0,129 | € 3,23 |
| 5000 + | € 0,126 | € 3,15 |
*prijsindicatie
- RS-stocknr.:
- 254-8638
- Fabrikantnummer:
- DMP32D9UDAQ-7B
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN0806-6 | |
| Mount Type | Surface | |
| Forward Voltage Vf | -0.6V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN0806-6 | ||
Mount Type Surface | ||
Forward Voltage Vf -0.6V | ||
Maximum Power Dissipation Pd 0.36W | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
Low input capacitance
Halogen and antimony Free
ESD protected gate
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