DiodesZetex Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 3-Pin TO-252 DMT15H053SK3-13
- RS-stocknr.:
- 254-8646
- Fabrikantnummer:
- DMT15H053SK3-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 4,43
(excl. BTW)
€ 5,36
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.230 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,443 | € 4,43 |
| 50 - 90 | € 0,432 | € 4,32 |
| 100 - 240 | € 0,419 | € 4,19 |
| 250 - 990 | € 0,409 | € 4,09 |
| 1000 + | € 0,40 | € 4,00 |
*prijsindicatie
- RS-stocknr.:
- 254-8646
- Fabrikantnummer:
- DMT15H053SK3-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 2.29mm | |
| Length | 6.58mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 2.29mm | ||
Length 6.58mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in DC to DC converters and power
Low on resistance
Low power losses
Low switching losses
Halogen and antimony free
Gerelateerde Links
- Diodes Inc N-Channel MOSFET 150 V DPAK DMT15H053SK3-13
- Diodes Inc DMTH3002LK3 N-Channel MOSFET 30 V, 3-Pin DPAK DMTH3002LK3-13
- Diodes Inc N-Channel MOSFET 3-Pin DPAK DMT10H010LK3-13
- Diodes Inc N-Channel MOSFET 40 V DPAK DMTH47M2SK3-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin DPAK DMTH6016LK3-13
- Diodes Inc N-Channel MOSFET 40 V, 3-Pin DPAK DMN4026SK3-13
- Diodes Inc N-Channel MOSFET 30 V, 3-Pin DPAK DMN3009SK3-13
- Diodes Inc N-Channel MOSFET 100 V, 3-Pin DPAK DMTH10H015SK3-13
