DiodesZetex Type N-Channel MOSFET, 26 A, 100 V Enhancement, 8-Pin PowerDI3333-8 DMTH10H032LFVWQ-7
- RS-stocknr.:
- 254-8656
- Fabrikantnummer:
- DMTH10H032LFVWQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,67
(excl. BTW)
€ 6,86
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.840 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,567 | € 5,67 |
| 50 - 90 | € 0,556 | € 5,56 |
| 100 - 240 | € 0,461 | € 4,61 |
| 250 - 990 | € 0,45 | € 4,50 |
| 1000 + | € 0,438 | € 4,38 |
*prijsindicatie
- RS-stocknr.:
- 254-8656
- Fabrikantnummer:
- DMTH10H032LFVWQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.8mm | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Height 0.8mm | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in backlighting, dc to dc converters and power management functi
Low on resistance
Wet table flank for improved optical inspection
Low switching losses
Halogen and antimony free
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