Vishay Type P-Channel MOSFET, 1.1 A, 50 V, 3-Pin HVMDIP IRFD9010PBF
- RS-stocknr.:
- 256-7283
- Fabrikantnummer:
- IRFD9010PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,16
(excl. BTW)
€ 5,035
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 295 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 0,832 | € 4,16 |
| 10 - 20 | € 0,744 | € 3,72 |
| 25 - 45 | € 0,728 | € 3,64 |
| 50 - 70 | € 0,712 | € 3,56 |
| 75 + | € 0,698 | € 3,49 |
*prijsindicatie
- RS-stocknr.:
- 256-7283
- Fabrikantnummer:
- IRFD9010PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | HVMDIP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type HVMDIP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor P-channel mosfet HVMDIPs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
For automatic insertion
Compact, end stackable
Fast switching
Low drive current
Easy paralleled
Excellent temperature stability
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