Infineon HEXFET N-Channel MOSFET, 900 mA, 150 V, 6-Pin TSOP-6 IRF5802TRPBF
- RS-stocknr.:
- 257-9290
- Fabrikantnummer:
- IRF5802TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 4,46
(excl. BTW)
€ 5,40
(incl. BTW)
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- Plus verzending 2.960 stuk(s) vanaf 02 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,446 | € 4,46 |
| 100 - 240 | € 0,424 | € 4,24 |
| 250 - 490 | € 0,379 | € 3,79 |
| 500 - 990 | € 0,329 | € 3,29 |
| 1000 + | € 0,20 | € 2,00 |
*prijsindicatie
- RS-stocknr.:
- 257-9290
- Fabrikantnummer:
- IRF5802TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TSOP-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TSOP-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
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