Infineon HEXFET Type N-Channel MOSFET, 0.9 A, 150 V, 6-Pin TSOP-6 IRF5802TRPBF
- RS-stocknr.:
- 257-9290
- Fabrikantnummer:
- IRF5802TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 2,34
(excl. BTW)
€ 2,83
(incl. BTW)
Voeg 380 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 3.960 stuk(s) vanaf 13 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,234 | € 2,34 |
| 100 - 240 | € 0,222 | € 2,22 |
| 250 - 490 | € 0,199 | € 1,99 |
| 500 - 990 | € 0,173 | € 1,73 |
| 1000 + | € 0,106 | € 1,06 |
*prijsindicatie
- RS-stocknr.:
- 257-9290
- Fabrikantnummer:
- IRF5802TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET 150 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6
- Infineon HEXFET Type N-Channel MOSFET 30 V TSOP-6
- Infineon HEXFET Type N-Channel MOSFET -40 V, 6-Pin TSOP-6 IRF5803TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V TSOP-6 IRLTS6342TRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 6-Pin TSOP
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 6-Pin TSOP IRF5801TRPBF
