Infineon HEXFET N-Channel MOSFET, 80 A, 100 V TO-220 IRF8010PBF
- RS-stocknr.:
- 257-9325
- Fabrikantnummer:
- IRF8010PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 69,00
(excl. BTW)
€ 83,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 550 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,38 | € 69,00 |
| 100 - 200 | € 1,159 | € 57,95 |
| 250 - 450 | € 1,104 | € 55,20 |
| 500 - 950 | € 1,008 | € 50,40 |
| 1000 + | € 0,966 | € 48,30 |
*prijsindicatie
- RS-stocknr.:
- 257-9325
- Fabrikantnummer:
- IRF8010PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 100V single n channel power mosfet in a TO 220 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard through hole power package
High current rating
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 100 V TO-220 IRF8010PBF
- Infineon HEXFET N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V TO-220
- Infineon HEXFET N-Channel MOSFET 100 V TO-220
- Infineon HEXFET N-Channel MOSFET 100 V TO-220
- Infineon HEXFET N-Channel MOSFET 100 V TO-220
- Infineon HEXFET N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-220 IRF100B201