Infineon IAUC Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 258-0911
- Fabrikantnummer:
- IAUC100N08S5N031ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 3.570,00
(excl. BTW)
€ 4.320,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,714 | € 3.570,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0911
- Fabrikantnummer:
- IAUC100N08S5N031ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-5 power-transistor is N-channel enhancement mode. It has 175°C operating temperature.
AEC qualified
MSL1 up to 260°C peak reflow
Gerelateerde Links
- Infineon N-Channel MOSFET 80 V PG-TDSON-8 IAUC100N08S5N031ATMA1
- Infineon N-Channel MOSFET 80 V PG-TDSON IPP034N08N5AKSA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 BSC050N03LSGATMA1
- Infineon N-Channel MOSFET 40 V PG-TDSON IAUC100N04S6N022ATMA1
- Infineon N-Channel MOSFET 40 V PG-TDSON IAUC100N04S6N015ATMA1
- Infineon OptiMOS7 N-Channel MOSFET 80 V, 8-Pin PG-TDSON-8-53 IAUCN08S7N013ATMA1
- Infineon N-Channel MOSFET 100 V PG-TDSON-8 BSZ440N10NS3GATMA1
- Infineon N-Channel MOSFET 100 V PG-TDSON-8 IPB123N10N3GATMA1
