Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 102,65

(excl. BTW)

€ 124,20

(incl. BTW)

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  • Verzending vanaf 05 mei 2026
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Aantal stuks
Per stuk
Per tube*
50 - 50€ 2,053€ 102,65
100 - 200€ 1,704€ 85,20
250 - 450€ 1,581€ 79,05
500 - 950€ 1,52€ 76,00
1000 +€ 1,458€ 72,90

*prijsindicatie

RS-stocknr.:
258-3779
Fabrikantnummer:
IPAN60R125PFD7SXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

IPA

Mount Type

Surface

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The MOSFET in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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