Infineon IPD Type N-Channel MOSFET, 4.3 A, 500 V N, 3-Pin TO-252 IPD50R950CEAUMA1
- RS-stocknr.:
- 258-3847
- Fabrikantnummer:
- IPD50R950CEAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 3,42
(excl. BTW)
€ 4,14
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.290 stuk(s) vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,684 | € 3,42 |
| 50 - 120 | € 0,61 | € 3,05 |
| 125 - 245 | € 0,576 | € 2,88 |
| 250 - 495 | € 0,532 | € 2,66 |
| 500 + | € 0,344 | € 1,72 |
*prijsindicatie
- RS-stocknr.:
- 258-3847
- Fabrikantnummer:
- IPD50R950CEAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 53W | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 53W | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
High body diode ruggedness
Reduced reverse recovery charge
Easy control of switching behaviour
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