Infineon IPL MOSFET, 14 A, 650 V TDSON
- RS-stocknr.:
- 258-3888
- Fabrikantnummer:
- IPLK60R600PFD7ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.915,00
(excl. BTW)
€ 2.315,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 5.000 stuk(s) vanaf 01 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,383 | € 1.915,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3888
- Fabrikantnummer:
- IPLK60R600PFD7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TDSON | |
| Series | IPL | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TDSON | ||
Series IPL | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The super junction MOSFET in a ThinPAK 5x6 package features RDS(on) of 600mOhm leading to low switching losses. This package is characterized by a very small footprint of 5x6mm² and a very low profile with a height of 1mm. Together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. The CoolMOS PFD7 products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer.
Very low FOM RDS(on) x Eoss
Integrated robust fast body diode
Up to 2kV ESD protection
Wide range of RDS(on) values
Minimized switching losses
Power density improvement compared to latest CoolMOS charger technology
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