Infineon IPP Type N-Channel MOSFET, 120 A, 80 V, 3-Pin TDSON

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 tube van 50 eenheden)*

€ 78,55

(excl. BTW)

€ 95,05

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 300 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
50 - 50€ 1,571€ 78,55
100 - 200€ 1,445€ 72,25
250 +€ 1,367€ 68,35

*prijsindicatie

RS-stocknr.:
258-3890
Fabrikantnummer:
IPP034N08N5AKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

IPP

Package Type

TDSON

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.4mΩ

Maximum Power Dissipation Pd

167W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

69nC

Forward Voltage Vf

0.97V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS 5 80 V MOSFETs offer the industry's lowest RDS(on). Additionally, compared to the previous generation, OptiMOS 5 80 V has an RDS(on) reduction of up to 43%.

Ideal for high switching frequency

Output capacitance reduction of up to 44 %

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Gerelateerde Links