Infineon IPP Type N-Channel MOSFET, 50 A, 650 V TO-220 IPP65R041CFD7XKSA1
- RS-stocknr.:
- 258-3897
- Fabrikantnummer:
- IPP65R041CFD7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,41
(excl. BTW)
€ 8,97
(incl. BTW)
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- Plus verzending 496 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 7,41 |
| 5 - 9 | € 7,03 |
| 10 - 24 | € 6,74 |
| 25 - 49 | € 6,44 |
| 50 + | € 6,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3897
- Fabrikantnummer:
- IPP65R041CFD7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPP | ||
Package Type TO-220 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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