Infineon BSZ Type N-Channel MOSFET, 40 A, 30 V N, 8-Pin TSDSON
- RS-stocknr.:
- 259-1478
- Fabrikantnummer:
- BSZ019N03LSATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.450,00
(excl. BTW)
€ 2.950,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,49 | € 2.450,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1478
- Fabrikantnummer:
- BSZ019N03LSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9Ω | |
| Channel Mode | N | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9Ω | ||
Channel Mode N | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon n channel power MOSFET, It is ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make optimos 30V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. optimos 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half-bridge configuration.
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
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