onsemi NXH020U90MNF2PTG Type N-Channel MOSFET, 149 A, 900 V N, 20-Pin F2-VIENNA: Case 180BZ
- RS-stocknr.:
- 261-9558
- Fabrikantnummer:
- NXH020U90MNF2PTG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 tray van 20 eenheden)*
€ 3.350,56
(excl. BTW)
€ 4.054,18
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 20 - 20 | € 167,528 | € 3.350,56 |
| 40 - 40 | € 163,232 | € 3.264,64 |
| 60 + | € 159,155 | € 3.183,10 |
*prijsindicatie
- RS-stocknr.:
- 261-9558
- Fabrikantnummer:
- NXH020U90MNF2PTG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 149A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | F2-VIENNA: Case 180BZ | |
| Series | NXH020U90MNF2PTG | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 6V | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 352W | |
| Typical Gate Charge Qg @ Vgs | 546.4nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free, Pb-Free, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 149A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type F2-VIENNA: Case 180BZ | ||
Series NXH020U90MNF2PTG | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 6V | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 352W | ||
Typical Gate Charge Qg @ Vgs 546.4nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free, Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFETS provides is a power module containing a vienna rectifier module consisting of two 10 milli-ohms and also switches having a M2 technology and are driven with 15V-18V gate drive.
Electric vehicle charging stations
Uninterruptible power supplies
Gerelateerde Links
- onsemi SiC N-Channel MOSFET 900 V, 20-Pin NXH020U90MNF2PTG
- onsemi NXH Quad SiC N-Channel MOSFET 1200 V, 34-Pin PIM34 NXH007F120M3F2PTHG
- onsemi SiC N-Channel MOSFET 900 V, 4-Pin TO-247-4L NTH4L020N090SC1
- STMicroelectronics SiC MOSFET SiC N-Channel MOSFET 900 V, 3-Pin TO-220FP STF16N90K5
- Wolfspeed SiC N-Channel MOSFET 900 V, 7-Pin D2PAK C3M0065090J
- Wolfspeed SiC N-Channel MOSFET 900 V, 7-Pin D2PAK C3M0280090J
- Wolfspeed SiC N-Channel MOSFET 900 V, 7-Pin D2PAK C3M0120090J
- Infineon 600V CoolMOS SiC N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1
