Renesas Electronics NP100P06PDG Type P-Channel MOSFET, 100 A, 60 V P, 4-Pin MP-25ZP (TO-263) NP100P06PDG-E1-AY
- RS-stocknr.:
- 264-1239
- Fabrikantnummer:
- NP100P06PDG-E1-AY
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 9,92
(excl. BTW)
€ 12,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 106 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,96 | € 9,92 |
| 10 - 48 | € 4,475 | € 8,95 |
| 50 - 98 | € 4,38 | € 8,76 |
| 100 - 248 | € 3,66 | € 7,32 |
| 250 + | € 3,585 | € 7,17 |
*prijsindicatie
- RS-stocknr.:
- 264-1239
- Fabrikantnummer:
- NP100P06PDG-E1-AY
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NP100P06PDG | |
| Package Type | MP-25ZP (TO-263) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 300nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NP100P06PDG | ||
Package Type MP-25ZP (TO-263) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 300nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
The Renesas Electronics provides a low voltage power with P-channel type MOS Field Effect Transistor which is designed for high current switching applications. It consist of a 100 A maximum drain current.
Maximum drain source voltage is 60 V
Mounting type is surface mount
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