ROHM RQ6E030AT Type P-Channel MOSFET, -3 A, 30 V Enhancement, 6-Pin SOT-457 RQ6E030ATTCR
- RS-stocknr.:
- 264-3831
- Fabrikantnummer:
- RQ6E030ATTCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 10,85
(excl. BTW)
€ 13,125
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.900 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,434 | € 10,85 |
| 50 - 75 | € 0,426 | € 10,65 |
| 100 - 225 | € 0,324 | € 8,10 |
| 250 - 975 | € 0,318 | € 7,95 |
| 1000 + | € 0,255 | € 6,38 |
*prijsindicatie
- RS-stocknr.:
- 264-3831
- Fabrikantnummer:
- RQ6E030ATTCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-457 | |
| Series | RQ6E030AT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-free lead plating | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-457 | ||
Series RQ6E030AT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-free lead plating | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The ROHM middle power MOSFET is small surface mount package MOSFET, it is small surface mount package, Pb-free lead plating and RoHS compliant.
Low on-resistance
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