ROHM RUQ050N02HZG Type N-Channel MOSFET, 5 A, 20 V Enhancement, 6-Pin SOT-457 RUQ050N02HZGTR
- RS-stocknr.:
- 264-3885
- Fabrikantnummer:
- RUQ050N02HZGTR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 3,97
(excl. BTW)
€ 4,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.980 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,397 | € 3,97 |
| 50 - 90 | € 0,388 | € 3,88 |
| 100 - 240 | € 0,305 | € 3,05 |
| 250 - 990 | € 0,299 | € 2,99 |
| 1000 + | € 0,234 | € 2,34 |
*prijsindicatie
- RS-stocknr.:
- 264-3885
- Fabrikantnummer:
- RUQ050N02HZGTR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RUQ050N02HZG | |
| Package Type | SOT-457 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RUQ050N02HZG | ||
Package Type SOT-457 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The ROHM small signal MOSFET is a MOSFET with low on resistance, suitable for switching, it is small surface mount package, Pb-free lead plating and RoHS compliant.
AEC-Q101 Qualified
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