Microchip TN0610 Type N-Channel MOSFET, 500 A, 100 V Enhancement, 3-Pin TO-92
- RS-stocknr.:
- 264-8911
- Fabrikantnummer:
- TN0610N3-G
- Fabrikant:
- Microchip
Subtotaal (1 zak van 1000 eenheden)*
€ 860,00
(excl. BTW)
€ 1.040,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 1000 + | € 0,86 | € 860,00 |
*prijsindicatie
- RS-stocknr.:
- 264-8911
- Fabrikantnummer:
- TN0610N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 500A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TN0610 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 500A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TN0610 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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