Vishay SiJA Type N-Channel MOSFET, 126 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- RS-stocknr.:
- 268-8322
- Fabrikantnummer:
- SiJA54ADP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.908,00
(excl. BTW)
€ 2.310,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,636 | € 1.908,00 |
*prijsindicatie
- RS-stocknr.:
- 268-8322
- Fabrikantnummer:
- SiJA54ADP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | SiJA | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0023Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.13mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series SiJA | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0023Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Length 5.13mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It has flexible leads which provide resilience to mechanical stress. It is used an application as synchronous rectification, dc or ac inverters.
Optimizes switching characteristics
ROHS compliant
UIS tested 100 percent
Gerelateerde Links
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- Vishay N-Channel MOSFET 80 V PowerPAK SO-8L SIJ482DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SIJA74DP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 25 V, 4-Pin PowerPAK SO-8L SiJA22DP-T1-GE3
- Vishay SiJ462ADP N-Channel MOSFET 60 V, 4-Pin PowerPAK SO-8L SiJ462ADP-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 45 V, 4-Pin PowerPAK SO-8L SiJ450DP-T1-GE3
- Vishay SiJ128LDP N-Channel MOSFET 80 V, 4-Pin PowerPAK SO-8L SiJ128LDP-T1-GE3
- Vishay Silicon N-Channel MOSFET 100 V, 7-Pin SO-8L SIJ4108DP-T1-GE3
