Infineon GaN MOSFET, 60 A, 600 V, 8-Pin HSOF IGT60R070D1ATMA4

Bekijk alle MOSFETs

Subtotaal (1 rol van 2000 eenheden)*

€ 13.132,00

(excl. BTW)

€ 15.890,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
Per rol*
2000 +€ 6,566€ 13.132,00

*prijsindicatie

RS-stocknr.:
273-2755
Fabrikantnummer:
IGT60R070D1ATMA4
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

600 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

GaN

The Infineon Power Transistor is a Gallium nitride CoolGaN™ 600V enhancement mode power transistor. This power transistor offers fast turn on and turn off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN tailored qualification well beyond existing standards. It addresses Datacom and server SMPS, telecom as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density.

Reduces EMI
System cost reduction savings
Capable of reverse conduction
Superior commutation ruggedness
Enables higher operating frequency
Low gate charge and low output charge