Vishay SQA Type P-Channel MOSFET, 9 A, 12 V Enhancement, 7-Pin SC-70W-6L SQA409CEJW-T1_GE3
- RS-stocknr.:
- 280-0017
- Fabrikantnummer:
- SQA409CEJW-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 9,50
(excl. BTW)
€ 11,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 20 | € 0,475 | € 9,50 |
| 40 - 80 | € 0,415 | € 8,30 |
| 100 - 280 | € 0,369 | € 7,38 |
| 300 - 980 | € 0,361 | € 7,22 |
| 1000 + | € 0,354 | € 7,08 |
*prijsindicatie
- RS-stocknr.:
- 280-0017
- Fabrikantnummer:
- SQA409CEJW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | SQA | |
| Package Type | SC-70W-6L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0288Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | -0.72V | |
| Maximum Power Dissipation Pd | 13.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series SQA | ||
Package Type SC-70W-6L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0288Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf -0.72V | ||
Maximum Power Dissipation Pd 13.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 2.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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