onsemi UniFET Type P-Channel MOSFET, 460 mA, 25 V Enhancement, 3-Pin SOT-23 FDV304P
- RS-stocknr.:
- 354-4913
- Fabrikantnummer:
- FDV304P
- Fabrikant:
- onsemi
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*prijsindicatie
- RS-stocknr.:
- 354-4913
- Fabrikantnummer:
- FDV304P
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 460mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 350mW | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 460mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 350mW | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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