N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1
- RS-stocknr.:
- 354-5708P
- Fabrikantnummer:
- BSP135H6327XTSA1
- Fabrikant:
- Infineon
2351 op voorraad - levertijd is 1 werkdag(en).
Prijs Per stuk (geleverd op een rol) Quantities below 150 on continuous strip
€ 1,22
(excl. BTW)
€ 1,48
(incl. BTW)
| Aantal stuks | Per stuk |
| 10 - 49 | € 1,22 |
| 50 - 99 | € 1,13 |
| 100 - 249 | € 1,04 |
| 250 + | € 0,97 |
- RS-stocknr.:
- 354-5708P
- Fabrikantnummer:
- BSP135H6327XTSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 mA |
| Maximum Drain Source Voltage | 600 V |
| Series | SIPMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 60 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
| Width | 3.5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.6mm |
- RS-stocknr.:
- 354-5708P
- Fabrikantnummer:
- BSP135H6327XTSA1
- Fabrikant:
- Infineon