Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1
- RS-stocknr.:
- 462-3247
- Fabrikantnummer:
- SPD08P06PGBTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,99
(excl. BTW)
€ 7,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 280 stuk(s) vanaf 29 december 2025
- Plus verzending 4.100 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,599 | € 5,99 |
| 100 - 240 | € 0,569 | € 5,69 |
| 250 - 490 | € 0,546 | € 5,46 |
| 500 - 990 | € 0,521 | € 5,21 |
| 1000 + | € 0,485 | € 4,85 |
*prijsindicatie
- RS-stocknr.:
- 462-3247
- Fabrikantnummer:
- SPD08P06PGBTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Forward Voltage Vf | -1.55V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Forward Voltage Vf -1.55V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1
This MOSFET is designed for applications requiring efficient switching and control. It can handle continuous drain currents of 8.8A and a drain-source voltage of 60V, suitable for various electronic circuits. The device operates effectively within a broad temperature range, enhancing performance in challenging environments.
Features & Benefits
• Enhanced mode operation ensures efficient switching performance
• High power capacity caters to strong electronic applications
• Low Rds(on) minimises energy losses during operation
• Utilises DPAK package for effective surface mount applications
Applications
• Applicable in automotive electronic controls for high reliability
• Ideal for power management systems in industrial equipment
• Suitable for battery management systems in electric vehicles
• Utilised in inverter technology for renewable energy systems
• Used in electronic switching devices for consumer products
What are the implications of using a P-channel configuration?
P-channel configurations facilitate easy integration in high-side switch applications, providing convenient control within circuits.
How does the thermal performance affect longevity?
The capability to operate at up to +175°C enhances reliability and contributes to a longer lifespan in harsh environments.
What is the significance of the AEC-Q101 qualification?
This qualification confirms its suitability for automotive applications, meeting stringent reliability and safety standards.
Can this be used in conjunction with other MOSFETs?
Yes, it can be integrated with other components to create complementary circuits for efficient multi-switching applications.
What factors influence the power dissipation in this device?
Key factors include ambient temperature, drain current, and duty cycle during operation, all affecting overall thermal performance.
Gerelateerde Links
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin DPAK SPD08P06PGBTMA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin DPAK SPD09P06PLGBTMA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin DPAK SPD30P06PGBTMA1
- Infineon SIPMOS® P-Channel MOSFET 100 V, 3-Pin DPAK SPD04P10PLGBTMA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin D2PAK SPB80P06PGATMA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-223 BSP315PH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-223 BSP170PH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
