Infineon CoolMOS C3 Type N-Channel MOSFET, 20.7 A, 650 V Enhancement, 3-Pin TO-247 SPW20N60C3FKSA1

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Verpakkingsopties
RS-stocknr.:
462-3449
Fabrikantnummer:
SPW20N60C3FKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20.7A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS C3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

87nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

20.95mm

Length

15.9mm

Width

5.3 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1


This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits


• N-channel configuration enhances conduction capabilities

• Maximum continuous drain current of 21A supports intensive applications

• High voltage rating of 650V provides reliability in challenging conditions

• Low gate charge facilitates efficient switching, reducing energy losses

• Excellent thermal performance allows operation at elevated temperatures

• Designed for through-hole mounting, simplifying assembly procedures

Applications


• Power supply regulation and management in industrial systems

• Motor control systems for efficient power delivery

• Utilised in DC-DC converters for high voltage

• Integrated into renewable energy systems for effective energy conversion

• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?


It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?


A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?


Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?


This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

What safety precautions should be taken during installation?


Ensure the gate-source voltage does not exceed specified limits (-20V to +20V) to prevent device damage, and follow standard ESD precautions to avoid static damage.

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