STMicroelectronics Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 485-7686
- Fabrikantnummer:
- STP4NK60Z
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,90
(excl. BTW)
€ 8,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 2.495 stuk(s) vanaf 08 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 1,38 | € 6,90 |
| 10 + | € 1,31 | € 6,55 |
*prijsindicatie
- RS-stocknr.:
- 485-7686
- Fabrikantnummer:
- STP4NK60Z
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 18.8nC | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 18.8nC | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Height 9.15mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Gerelateerde Links
- STMicroelectronics MDmesh 4 A 3-Pin TO-220 STP4NK60Z
- STMicroelectronics MDmesh 7 A 3-Pin TO-220 STP9NK60Z
- STMicroelectronics MDmesh 10 A 3-Pin TO-220 STP10NK60Z
- STMicroelectronics MDmesh 13 A 3-Pin TO-220 STP13NK60Z
- STMicroelectronics MDmesh 6 A 3-Pin TO-220 STP6NK60Z
- STMicroelectronics MDmesh 1 A 3-Pin DPAK STD1NK60T4
- STMicroelectronics MDmesh 4 A 3-Pin D2PAK STB4NK60ZT4
- STMicroelectronics MDmesh 40 A 4-Pin ISOTOP STE40NC60
