Infineon HEXFET Type N-Channel MOSFET, 81 A, 55 V Enhancement, 3-Pin TO-247 IRFP054NPBF

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Verpakkingsopties
RS-stocknr.:
541-1253
Fabrikantnummer:
IRFP054NPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

130nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

15.9mm

Standards/Approvals

No

Height

20.3mm

Width

5.3 mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF


This MOSFET provides a robust solution for high-speed performance and efficient power management. With its N-channel configuration, the device ensures dependable operation across various electronic circuits. It accommodates continuous drain currents up to 81A and has a voltage rating of 55V, making it a notable choice for professionals in the automation, electronics, and mechanical sectors.

Features & Benefits


• Maximum continuous drain current of 81A supports high-performance applications

• Low on-resistance of 12mΩ contributes to improved efficiency

• Wide gate threshold voltage range allows for versatile circuit designs

• High power dissipation capability of 170W ensures long-lasting operation

• Compact TO-247AC package simplifies installation

Applications


• Used in power conversion and motor control systems

• Integral to power supply and amplifier circuits

• Applicable in renewable energy systems for efficient switching

• Suitable for automotive , enhancing performance resilience

What is the maximum power dissipation capability of this device?


The maximum power dissipation is rated at 170W, allowing it to manage substantial loads effectively.

How does the gate threshold voltage affect operation?


The gate threshold voltage ranges from 2V to 4V, which enables compatibility with various circuit designs and ensures efficient operation within specified parameters.

Can this MOSFET be used in high-temperature environments?


Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for challenging thermal conditions.

What are the benefits of using a low RDS(on)?


A low RDS(on) of 12mΩ reduces heat generation and enhances efficiency, critical for high-performance applications.

Is it easy to install in existing electronic systems?


The TO-247AC package type is designed for through-hole mounting, making it straightforward to install in various applications.

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