Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-262 IRF4905LPBF

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Verpakkingsopties
RS-stocknr.:
650-3662
Fabrikantnummer:
IRF4905LPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-262

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

180nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.8W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Height

10.54mm

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Distrelec Product Id

304-29-285

Automotive Standard

No

Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF


This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.

Features & Benefits


• Enhanced performance at high temperatures, up to +175°C

• Low RDS(on) for decreased power losses during operation

• Fast switching capabilities to improve efficiency

• Tolerates repetitive avalanche conditions without failure

• Effective gate charge characteristics for better circuit responsiveness

Applications


• Used in power management circuits for energy-efficient devices

• Ideal for brushless DC motor control

• Applicable in automotive electronics for increased reliability

• Suitable for industrial automation systems that require robust components

What type of voltage can be handled during operation?


It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.

Can this device operate at elevated temperatures?


Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.

How does the low RDS(on) benefit circuit design?


The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.

Is this component compatible with typical PCB designs?


Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.

What are the gate threshold voltage values for this MOSFET?


The maximum gate threshold voltage is 4V, and the minimum is 2V, ensuring your circuit switches correctly at low voltages.

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