Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-262 IRF4905LPBF

RS-stocknr.:: 650-3662
Artikelnummer Distrelec:: 304-29-285
Fabrikantnummer:: IRF4905LPBF
Fabrikant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-262 IRF4905LPBF

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RS-stocknr.:: 650-3662
Artikelnummer Distrelec:: 304-29-285
Fabrikantnummer:: IRF4905LPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-262
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	3.8W
	Forward Voltage Vf	-1.3V
	Typical Gate Charge Qg @ Vgs	180nC
	Maximum Operating Temperature	175°C
	Width	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Height	10.54mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-262
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 3.8W
	Forward Voltage Vf -1.3V
	Typical Gate Charge Qg @ Vgs 180nC
	Maximum Operating Temperature 175°C
	Width 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Height 10.54mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF

This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.

Features & Benefits

• Enhanced performance at high temperatures, up to +175°C

• Low RDS(on) for decreased power losses during operation

• Fast switching capabilities to improve efficiency

• Tolerates repetitive avalanche conditions without failure

• Effective gate charge characteristics for better circuit responsiveness

Applications

• Used in power management circuits for energy-efficient devices

• Ideal for brushless DC motor control

• Applicable in automotive electronics for increased reliability

• Suitable for industrial automation systems that require robust components

What type of voltage can be handled during operation?

It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.

Can this device operate at elevated temperatures?

Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.

How does the low RDS(on) benefit circuit design?

The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.

Is this component compatible with typical PCB designs?

Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.

What are the gate threshold voltage values for this MOSFET?

The maximum gate threshold voltage is 4V, and the minimum is 2V, ensuring your circuit switches correctly at low voltages.