Vishay IRF9530S Type P-Channel Power MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-263 IRF9530SPBF
- RS-stocknr.:
- 650-4176
- Fabrikantnummer:
- IRF9530SPBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,32
(excl. BTW)
€ 16,115
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 465 stuk(s) vanaf 05 januari 2026
- Plus verzending 20 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,664 | € 13,32 |
| 50 - 120 | € 2,266 | € 11,33 |
| 125 - 245 | € 2,132 | € 10,66 |
| 250 - 495 | € 2,00 | € 10,00 |
| 500 + | € 1,598 | € 7,99 |
*prijsindicatie
- RS-stocknr.:
- 650-4176
- Fabrikantnummer:
- IRF9530SPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IRF9530S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 88W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -100V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Width | 9.02 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IRF9530S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 88W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -100V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Width 9.02 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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