Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220 IRFB3077PBF
- RS-stocknr.:
- 650-4716
- Artikelnummer Distrelec:
- 303-41-316
- Fabrikantnummer:
- IRFB3077PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 3,06
(excl. BTW)
€ 3,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 126 stuk(s) vanaf 29 december 2025
- Plus verzending 954 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,06 |
| 10 - 24 | € 2,90 |
| 25 - 49 | € 2,84 |
| 50 - 99 | € 2,67 |
| 100 + | € 2,47 |
*prijsindicatie
- RS-stocknr.:
- 650-4716
- Artikelnummer Distrelec:
- 303-41-316
- Fabrikantnummer:
- IRFB3077PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 370W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30341316 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 370W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Automotive Standard No | ||
Distrelec Product Id 30341316 | ||

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF
This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.
Features & Benefits
• Achieves low RDS(on) of 3.3mΩ for efficient operation
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical
What operating temperature range can this component endure?
It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.
How does the low RDS(on) benefit the application?
The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.
What are the advantages of the TO-220AB package format?
This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.
What type of gate threshold voltage does it require?
The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB IRFB3077PBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB AUIRF2907Z
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin TO-220AB IRFB3206PBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220AB IRFB3207PBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220AB IRFB3207ZPBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220AB IRF2907ZPBF
- Infineon HEXFET Silicon N-Channel MOSFET 40 V, 3-Pin TO-220AB IRF2204PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 75 V, 3-Pin TO-220AB IRF2807ZPBF
