DiodesZetex Type N-Channel MOSFET, 600 mA, 60 V Enhancement, 3-Pin E-Line ZVN4206ASTZ
- RS-stocknr.:
- 669-7717
- Fabrikantnummer:
- ZVN4206ASTZ
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,34
(excl. BTW)
€ 7,67
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 2.400 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 20 | € 0,634 | € 6,34 |
| 30 - 90 | € 0,557 | € 5,57 |
| 100 - 490 | € 0,545 | € 5,45 |
| 500 - 990 | € 0,53 | € 5,30 |
| 1000 + | € 0,515 | € 5,15 |
*prijsindicatie
- RS-stocknr.:
- 669-7717
- Fabrikantnummer:
- ZVN4206ASTZ
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.01mm | |
| Width | 2.41 mm | |
| Length | 4.77mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.01mm | ||
Width 2.41 mm | ||
Length 4.77mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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