P-Channel MOSFET, 8.8 A, 30 V, 8-Pin SOIC onsemi FDS4435BZ
- RS-stocknr.:
- 671-0508
- Fabrikantnummer:
- FDS4435BZ
- Fabrikant:
- onsemi
30 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
100 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 0,632
(excl. BTW)
€ 0,765
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 20 | € 0,632 | € 3,16 |
| 25 - 120 | € 0,366 | € 1,83 |
| 125 - 620 | € 0,272 | € 1,36 |
| 625 - 1245 | € 0,256 | € 1,28 |
| 1250 + | € 0,25 | € 1,25 |
| *prijsindicatie | ||
- RS-stocknr.:
- 671-0508
- Fabrikantnummer:
- FDS4435BZ
- Fabrikant:
- onsemi
Wetgeving en compliance
Productomschrijving
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 4mm |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 671-0508
- Fabrikantnummer:
- FDS4435BZ
- Fabrikant:
- onsemi