onsemi UniFET Type N-Channel MOSFET, 61 A, 200 V Enhancement, 3-Pin TO-220 FDP61N20
- RS-stocknr.:
- 671-4859
- Fabrikantnummer:
- FDP61N20
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 2,30
(excl. BTW)
€ 2,78
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 9 stuk(s) vanaf 29 december 2025
- Plus verzending 584 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,30 |
| 10 - 19 | € 1,93 |
| 20 - 49 | € 1,84 |
| 50 - 99 | € 1,75 |
| 100 + | € 1,67 |
*prijsindicatie
- RS-stocknr.:
- 671-4859
- Fabrikantnummer:
- FDP61N20
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | UniFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series UniFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi UniFET N-Channel MOSFET 200 V, 3-Pin TO-220AB FDP61N20
- Fairchild UniFET N-Channel MOSFET 200 V, 3-Pin TO-220AB FDP52N20
- onsemi UniFET N-Channel MOSFET 250 V, 3-Pin TO-220AB FDP33N25
- onsemi UniFET N-Channel MOSFET 75 V, 3-Pin TO-220AB FDP75N08A
- onsemi UniFET N-Channel MOSFET 250 V, 3-Pin TO-220AB FDP51N25
- onsemi UniFET N-Channel MOSFET 200 V, 3-Pin D2PAK FDB52N20TM
- onsemi UniFET N-Channel MOSFET 200 V, 3-Pin DPAK FDD18N20LZ
- onsemi UniFET N-Channel MOSFET 200 V, 3-Pin TO-220F FDPF39N20