onsemi UniFET Type N-Channel MOSFET, 18 A, 500 V Enhancement, 3-Pin TO-220

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RS-stocknr.:
671-4884P
Fabrikantnummer:
FDPF18N50
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

500 V

Maximum Drain Source Voltage Vds

500V

Series

UniFET

Package Type

TO-220F

Mounting Type

Through Hole

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Maximum Drain Source Resistance Rds

265mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation Pd

38.5W

Maximum Power Dissipation

38.5 W

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

45nC

Maximum Operating Temperature

+150 °C

Transistor Configuration

Single

Height

9.19mm

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.7mm

Standards/Approvals

No

Length

10.16mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

45 nC @ 10 V

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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