onsemi UniFET Type N-Channel MOSFET, 18 A, 500 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 671-4884P
- Fabrikantnummer:
- FDPF18N50
- Fabrikant:
- onsemi
Subtotaal 10 eenheden (geleverd in een buis)*
€ 24,50
(excl. BTW)
€ 29,60
(incl. BTW)
Aantal stuks | Per stuk |
|---|---|
| 10 + | € 2,45 |
*prijsindicatie
- RS-stocknr.:
- 671-4884P
- Fabrikantnummer:
- FDPF18N50
- Fabrikant:
- onsemi
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 500 V | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | UniFET | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 265 mΩ | |
| Maximum Drain Source Resistance Rds | 265mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation Pd | 38.5W | |
| Maximum Power Dissipation | 38.5 W | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Configuration | Single | |
| Height | 9.19mm | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 500 V | ||
Maximum Drain Source Voltage Vds 500V | ||
Series UniFET | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 265 mΩ | ||
Maximum Drain Source Resistance Rds 265mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation Pd 38.5W | ||
Maximum Power Dissipation 38.5 W | ||
Minimum Operating Temperature -55 °C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature +150 °C | ||
Transistor Configuration Single | ||
Height 9.19mm | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
MOSFET Transistors, ON Semi
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