DiodesZetex ZXMN6A09G Type N-Channel MOSFET, 7.5 A, 60 V Enhancement, 4-Pin SOT-223 ZXMN6A09GTA
- RS-stocknr.:
- 708-2589
- Fabrikantnummer:
- ZXMN6A09GTA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,87
(excl. BTW)
€ 8,315
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.135 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 14.135 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 10 | € 1,374 | € 6,87 |
| 15 - 45 | € 1,222 | € 6,11 |
| 50 - 245 | € 1,074 | € 5,37 |
| 250 - 495 | € 0,928 | € 4,64 |
| 500 + | € 0,772 | € 3,86 |
*prijsindicatie
- RS-stocknr.:
- 708-2589
- Fabrikantnummer:
- ZXMN6A09GTA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ZXMN6A09G | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 24.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ZXMN6A09G | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 24.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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