N-Channel MOSFET, 8 A, 500 V, 3-Pin D2PAK Vishay IRF840ASPBF

RS-stocknr.:: 708-5146
Fabrikantnummer:: IRF840ASPBF
Fabrikant:: Vishay

N-Channel MOSFET, 8 A, 500 V, 3-Pin D2PAK Vishay IRF840ASPBF

15 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)

25 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)

Toegevoegd

Prijs Elk (in een pakket van 5)

€ 3,006

(excl. BTW)

€ 3,637

(incl. BTW)

Aantal stuks	Per stuk	Per pak*
5 - 45	€ 3,006	€ 15,03
50 - 120	€ 2,286	€ 11,43
125 - 245	€ 2,104	€ 10,52
250 - 495	€ 1,802	€ 9,01
500 +	€ 1,564	€ 7,82
*prijsindicatie

RS-stocknr.:: 708-5146
Fabrikantnummer:: IRF840ASPBF
Fabrikant:: Vishay

Datasheets

Wetgeving en compliance

Land van herkomst:: CN

Productomschrijving

N-Channel MOSFET, 500V, Vishay Semiconductor

The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirement

MOSFET Transistors, Vishay Semiconductor

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	8 A
Maximum Drain Source Voltage	500 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	850 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	38 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Length	10.67mm
Width	9.65mm
Maximum Operating Temperature	+150 °C
Height	4.83mm
Minimum Operating Temperature	-55 °C

RS-stocknr.:: 708-5146
Fabrikantnummer:: IRF840ASPBF
Fabrikant:: Vishay