DiodesZetex DMG Type P-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC DMG4413LSS-13
- RS-stocknr.:
- 751-4102
- Fabrikantnummer:
- DMG4413LSS-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 5,64
(excl. BTW)
€ 6,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 1.580 stuk(s) vanaf 05 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 20 | € 0,564 | € 5,64 |
| 30 - 120 | € 0,464 | € 4,64 |
| 130 - 620 | € 0,406 | € 4,06 |
| 630 - 1240 | € 0,358 | € 3,58 |
| 1250 + | € 0,281 | € 2,81 |
*prijsindicatie
- RS-stocknr.:
- 751-4102
- Fabrikantnummer:
- DMG4413LSS-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMG | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Width | 3.95 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMG | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 4.95mm | ||
Width 3.95 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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