Infineon CoolMOS CP N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK IPB60R099CPATMA1

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RS-stocknr.:
753-2999
Fabrikantnummer:
IPB60R099CPATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Length

10.31mm

Maximum Operating Temperature

+150 °C

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Infineon CoolMOS™CP Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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